Tungsten Silicide

Tungsten silicide also named tungsten poly, poly tungsten. For using WSi2/n+ poly-si instead of n+ poly-si gate and interconnection,the multiply/accumulation time has failed from 125ns to 99ns. 1000A tungsten silicide film has been deposited on 1500A .polycrystalline silicon doped by POCL3.The.composite film was annealed at 1000C in N2 atomsphere.The sheet resistance is about 3.7ohm.per.square,calculated tungsten siiicide resistivity is 41.4 uohm.cm. Tungsten silicide has been used in CMOS 12X12 bit multiplier,device feature size is Sum.